Ionizing radiation effects in mos devices and circuits pdf

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ionizing radiation effects in mos devices and circuits pdf

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Radiation damage effects on bipolar and MOS devices in X-Ray lithography

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IEEE transactions on nuclear science 50 3 , , IEEE Transactions on nuclear science 29 6 , , Semiconductor Science and Technology 4 12 , , Ionizing radiation effects in MOS devices and circuits , IEEE transactions on nuclear science 40 6 , , IEEE transactions on nuclear science 53 6 , , Articles 1—20 Show more.

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Radiation hardening

Skip to Main Content. A not-for-profit organization, IEEE is the world's largest technical professional organization dedicated to advancing technology for the benefit of humanity. Use of this web site signifies your agreement to the terms and conditions. Radiation effects and hardening of MOS technology: devices and circuits Abstract: Total ionizing dose radiation effects on the electrical properties of metal-oxide-semiconductor devices and integrated circuits are complex in nature and have changed much during decades of device evolution. These effects are caused by radiation-induced charge buildup in oxide and interfacial regions. This paper presents an overview of these radiation-induced effects, their dependencies, and the many different approaches to their mitigation. Article :.


The first comprehensive overview describing the effects of ionizing radiation on MOS devices, as well as how to design, fabricate, and test integrated circuits.


Radiation damage effects on bipolar and MOS devices in X-Ray lithography

Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation particle radiation and high-energy electromagnetic radiation , [1] especially for environments in outer space especially beyond the low Earth orbit , around nuclear reactors and particle accelerators , or during nuclear accidents or nuclear warfare. Most semiconductor electronic components are susceptible to radiation damage, and radiation-hardened components are based on their non-hardened equivalents, with some design and manufacturing variations that reduce the susceptibility to radiation damage. Due to the extensive development and testing required to produce a radiation-tolerant design of a microelectronic chip, radiation-hardened chips tend to lag behind the most recent developments.

The devices under investigation were exposed to x-ray radiation and electrical measurements were performed to determine the radiation effects on device parameters. It was found for bipolar devices that the current gain is the parameter that is most sensitive to x-ray irradiation. Both n -channel and p -channel MOS devices with polysilicon gates were investigated. Host of the relevant device parameters were measured before and after irradiation and after annealing.

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